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5V with a CAS Latency of CL13
2xHMP125U6EFR8C-S6 Capacity 4GB (2x 2GB) Brand Hynix Speed DDR2-800 - 800MT/s - PC2-6400 Voltage 1
2xM470L2923BN0-CB3 Capacity 2GB (2x 1GB) Brand Samsung Speed DDR-333 - 333MT/s - PC2700 Voltage 2
Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 16GB (2x 8GB) DDR4 2133 MT/s 288-pin RDIMM RAM kit from Hynix
Samsung 4GB (1x 4GB) CL9 DDR3-1333 PC3-10600 1.5V ECC Registered 240-pin RDIMM RAM Module Processor_I3 5V with a CAS LatencyProduct Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (1x 4GB) DDR3 1333 MT s 240 pin RDIMM RAM module from Samsung . This RAM module is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL9, and is designed
