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Samsung 1GB (1x 1GB) CL2 DDR-266 PC2100 2.5V DR x4 ECC Registered 184-pin RDIMM RAM Module Classification_ram-ddr3-1066-sodimm-8gb-1x-dr-fm M312L5720BG0-CB3 Capacity 2GB (1x 2GB)

SKU 8675265986
4.0
USD25.99 USD73.99

Pay in 4 interest-free payments of $6.50 Learn more

Shipping Estimate
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Ships within 48 hours · Estimated delivery Aug 10 - Aug 15

Description

M312L5720BG0-CB3 Capacity 2GB (1x 2GB) Brand Samsung Speed DDR-333 - 333MT/s - PC2700 Voltage 2

5V Technology DDR3 Error Correction ECC Signal Processing Registered Form Factor 240-pin RDIMM Ranks Dual rank Configuration 18-chip 256Mx8 Pieces in Kit 1 Compatibility

x8 configuration RAM kit from Kingston is for use in DDR2 compatible systems and operates at 533 MT/s with an overall transfer rate of PC2-4200

M471B5273DH0-YF8 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3L-1066 -1066MT/s - 1067MT/s - PC3L-8500 Voltage 1

Samsung 1GB (1x 1GB) CL2 DDR-266 PC2100 2.5V DR x4 ECC Registered 184-pin RDIMM RAM Module Classification_ram-ddr3-1066-sodimm-8gb-1x-dr-fm M312L5720BG0-CB3 Capacity 2GB (1x 2GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 1GB (1x 1GB) DDR 266 MT s 184 pin RDIMM RAM module from Samsung . This Dual rank, x4 configuration RAM module is for use in DDR compatible systems and operates at 266 MT s with an overall transfer rate of PC2100. This RAM module also operates at a standard voltage of 2. 5V with a CAS Latency of

Exchange/Return Notes
  • We offer a 30-day return/exchange service after receiving.
  • Final sale items are not eligible for returns or exchanges.
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