Hynix 8GB (1x 8GB) CL19 DDR4-2666 PC4-21300 1.2V 288-pin UDIMM RAM Module Form Factor_288-pin EUDIMM 2xM470L6423EN0-CB0 Capacity 1GB (2x 512MB)

2xM470L6423EN0-CB0 Capacity 1GB (2x 512MB) Brand Samsung Speed DDR-266 - 266MT/s - PC2100 Voltage 2

This 512MB (1x 512MB) DDR2 400 MT/s Single rank

but the effective rate is 800 megatransfers per second (MT/s) because there are 400 million rising edges per second and 400 million falling edges per second of a clock signal running at 400 MHz

Random Write IOPS (4KB

Hynix 8GB (1x 8GB) CL19 DDR4-2666 PC4-21300 1.2V 288-pin UDIMM RAM Module Form Factor_288-pin EUDIMM 2xM470L6423EN0-CB0 Capacity 1GB (2x 512MB)Product Overview This 8GB (1x 8GB) DDR4 2666 MT s RAM module from Hynix is for use in DDR4 compatible systems and operates at 2666 MT s with an overall transfer rate of PC4 21300. This RAM module also operates at a standard voltage of 1. 2V with a CAS Latency of CL19, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.