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x8 configuration RAM kit from Samsung is for use in DDR compatible systems and operates at 333 MT/s with an overall transfer rate of PC2700
2xCT51264AA667 Capacity 8GB (2x 4GB) Brand Crucial Speed DDR2-667 - 667MT/s - PC2-5300 Voltage 1
2xHYMP125S64CP8-Y5 Capacity 4GB (2x 2GB) Brand Hynix
2V Technology DDR4 Error Correction ECC Signal Processing Unbuffered Form Factor 260-pin SODIMM Ranks Dual rank Configuration x8 Pieces in Kit 2 Compatibility
Samsung 512MB (1x 512MB) CL2.5 DDR-266 PC2100 2.5V DR x8 200-pin SODIMM RAM Module Classification_ram-ddr3l-1600-eudimm-16gb-2x-dr-fm x8 configuration RAM kit fromProduct Overview This 512MB (1x 512MB) DDR 266 MT s Dual rank, x8 configuration RAM module from Samsung is for use in DDR compatible systems and operates at 266 MT s with an overall transfer rate of PC2100. This RAM module also operates at a standard voltage of 2. 5V with a CAS Latency of CL2. 5, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical
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