Elpida 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr3-1066-sodimm-4gb-2x-dr-fm 2xHMT125U6TFR8C-H9 Capacity 4GB (2x 2GB)

2xHMT125U6TFR8C-H9 Capacity 4GB (2x 2GB) Brand Hynix Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

2xM391A1K43BB2-CTD Capacity 16GB (2x 8GB) Brand Samsung Speed DDR4-2666 - 2666MT/s - PC4-21300 Voltage 1

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 128GB (2x 64GB) DDR4 2666 MT/s 288-pin LRDIMM RAM kit from Samsung

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR3 1333 MT/s 240-pin RDIMM RAM module from Micron

Elpida 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr3-1066-sodimm-4gb-2x-dr-fm 2xHMT125U6TFR8C-H9 Capacity 4GB (2x 2GB)Product Overview This 4GB (1x 4GB) DDR3 1600 MT s RAM module from Elpida is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.