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Hynix 4GB (1x 4GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr3-1600-udimm-4gb-1x-sr-fm This 4GB (1x 4GB) DDR2

SKU 5290626705
4.4
USD42.99 USD62.99

Pay in 4 interest-free payments of $10.75 Learn more

Shipping Estimate
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Ships within 48 hours · Estimated delivery Aug 15 - Aug 20

Description

This 4GB (1x 4GB) DDR2 800 MT/s Dual rank

but the effective rate is 333 megatransfers per second (MT/s) because there are 166 million rising edges per second and 166 million falling edges per second of a clock signal running at 166 MHz

M393B5170FH0-CH9 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

MT18JSF51272AZ-1G4M1 Capacity 4GB (1x 4GB) Brand Micron Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

Hynix 4GB (1x 4GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr3-1600-udimm-4gb-1x-sr-fm This 4GB (1x 4GB) DDR2Product Overview This 4GB (1x 4GB) DDR3L 1600 MT s RAM module from Hynix is for use in DDR3L compatible systems and operates at 1600 MT s with an overall transfer rate of PC3L 12800. This RAM module also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.

Exchange/Return Notes
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  • Final sale items are not eligible for returns or exchanges.
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